IPD30N08S2L21ATMA1 vs BSZ130N03LSGATMA1 Comparación
Comparación detallada lado a lado de IPD30N08S2L21ATMA1 por Infineon y BSZ130N03LSGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ ActivoInfineon
BSZ130N03LSGATMA1 - 30V OptiMOS N-FET, 35A, PG-TSDSON-8 | Infineon
BSZ130N03LSGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD30N08S2L21ATMA1 | BSZ130N03LSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at Tc=25C | 30 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on)) at VGS=10 V | 26 milliohm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (L series) | — |
| Gate Charge (Qg) typ | 56 nC | — |
| Power Dissipation (PD) at Tc=25C | 136 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 C to +150 C (junction) |
| Maximum Junction Temperature | +175C | — |
| Encapsulado | PG-TO252-3-11 (DPAK-2) | PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Drain tab + Gate + Source) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Part Family | — | OptiMOS 25V / 30V |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Ta=25 C) | — | 10 A |
| Corriente de drenador continua (TC=25°C) | — | 35 A |
| On-State Resistance Rds(on) max @ Vgs=10V | — | 13 mOhm |
| Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA | — | 2.2 V |
| Power Dissipation (Ta) | — | 2.1 W |
| Power Dissipation (Tc) | — | 25 W |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes |
| Qualification | — | Industrial / Commercial (non-automotive) |