IPD30N10S3L34ATMA1 vs IPD30N08S2L21ATMA1 Comparación
Comparación detallada lado a lado de IPD30N10S3L34ATMA1 por Infineon y IPD30N08S2L21ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD30N10S3L34ATMA1 - 100V 30A N-Channel OptiMOS MOSFET | Infineon
IPD30N10S3L34ATMA1 ✓ ActivoInfineon
IPD30N08S2L21ATMA1 - 75V 30A N-Ch OptiMOS MOSFET DPAK | Infineon
IPD30N08S2L21ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD30N10S3L34ATMA1 | IPD30N08S2L21ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,38 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | — |
| Tipo de transistor | N-Channel Enhancement Mode MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 75 V |
| Continuous Drain Current (ID, Tc=25°C) | 30 A | — |
| Pulsed Drain Current (IDM) | 180 A | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD, Tc=25°C) | 57 W | — |
| Drain-Source On-Resistance (RDS(on) max) | 31 mΩ @ VGS=10 V | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 1.7 V (range 1.0 V to 2.5 V) | — |
| Total Gate Charge (Qg typ) | 23 nC | — |
| Temperatura de unión de funcionamiento | -55°C to +175°C | — |
| Encapsulado | PG-TO252-3-11 (DPAK-2 / SC-63) | PG-TO252-3-11 (DPAK-2) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Nivel MSL | 1 (JEDEC J-STD-020, 260°C peak reflow) | 1 |
| RoHS / REACH | Compliant | — |
| Lead-Free / Halogen-Free | Yes / Yes | — |
| Avalanche Rated | 100% Avalanche tested | — |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) at Tc=25C | — | 30 A |
| On-State Resistance (RDS(on)) at VGS=10 V | — | 26 milliohm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (L series) |
| Gate Charge (Qg) typ | — | 56 nC |
| Power Dissipation (PD) at Tc=25C | — | 136 W |
| Rango de temperatura de funcionamiento | — | -55C to +175C |
| Maximum Junction Temperature | — | +175C |
| Recuento de pines | — | 3 (Drain tab + Gate + Source) |
| Estado RoHS | — | Compliant |