IPD65R225C7ATMA1 vs IPD65R380E6ATMA1 Comparación
Comparación detallada lado a lado de IPD65R225C7ATMA1 por Infineon y IPD65R380E6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IPD65R225C7ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,34 | $0,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS C7 | CoolMOS™ E6 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | Super-junction (SJ) / CoolMOS | Superjunction (CoolMOS™) |
| Drain-Source Voltage (VDSS) | 650 V | — |
| Continuous Drain Current (ID) at TC | 11 A | — |
| Power Dissipation (PD) at TC | 63 W | — |
| On-Resistance RDS(on) max | 225 mΩ | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Rango de temperatura de funcionamiento | -55°C to +150°C | -55 °C to +150 °C |
| Encapsulado | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK), surface mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Número de pines | 3 (2 + tab) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 |
| Estado RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (per datasheet) | — |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |