IPD90N06S407ATMA2 vs IPD33CN10NGATMA1 Comparación
Comparación detallada lado a lado de IPD90N06S407ATMA2 por Infineon y IPD33CN10NGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPD33CN10NGATMA1 - 100V N-Ch OptiMOS MOSFET | Infineon | PG-TO252
IPD33CN10NGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPD90N06S407ATMA2 | IPD33CN10NGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,84 | $0,32 |
| FET Type | N-Channel Enhancement Mode | N-Channel |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D at T_C) | 90 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) Max at V_GS=10 V, I_D=90 A | 6.9 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | 4 V at 40 uA | — |
| Total Gate Charge (Q_G) at V_GS=10 V | 56 nC | — |
| Maximum Power Dissipation (P_D at T_C) | 79 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature range] | — |
| Encapsulado | PG-TO252-3-11 (DPAK) | PG-TO252-3 (DPAK), Surface Mount |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Green Product) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Avalanche Rating | 100% Avalanche Tested | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 27 A |
| Power Dissipation (PD, Tc) | — | 58 W |
| Technology | — | OptiMOS (Trench) |
| Recuento de pines | — | 3 (Gate, Drain, Source) |
| Rango de temperatura de funcionamiento | — | -55C to +175C (TJ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Nivel MSL | — | 1 |