IPL60R115CFD7AUMA1 vs IPB60R040CFD7ATMA1 Comparación
Comparación detallada lado a lado de IPL60R115CFD7AUMA1 por Infineon y IPB60R040CFD7ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPL60R115CFD7AUMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,65 | $5,19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPL60R115CFD7AUMA1 | — |
| Series | CoolMOS CFD7 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 22 A | — |
| On-Resistance (RDS(on)) | 115 mOhm (typ, VGS=10V) | — |
| Encapsulado / Carcasa | PG-VSON-4 (5x6 mm) with exposed pad | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | Superjunction MOSFET (CoolMOS CFD7) | Superjunction (SJ) N-Channel MOSFET |
| Integrated Body Diode | Yes - fast body diode (CFD) | Yes - ultra-fast CoolMOS CFD7 diode |
| Application | Resonant high-power topologies (LLC, PFC) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55°C to +150°C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Estado RoHS | Compliant (per distributor listings) | Compliant |
| Recuento de pines | 4 | — |
| Quantity per Reel | [DATA_NEEDED: reel qty] | — |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Disipación de potencia (TC=25°C) | — | 227 W |
| Encapsulado | — | PG-TO263-3-2 (D2PAK) |
| Nivel MSL | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |