IPP147N12N3GXKSA1 vs IPP200N15N3GXKSA1 Comparación

Comparación detallada lado a lado de IPP147N12N3GXKSA1 por Infineon y IPP200N15N3GXKSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro IPP147N12N3GXKSA1 IPP200N15N3GXKSA1
Marca Infineon Infineon
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $1,62 $1,79
Manufacturer Infineon Technologies —
Series OptiMOS —
Technology OptiMOS 3 trench MOSFET OptiMOS 3
Tipo de transistor N-Channel MOSFET —
Configuration Single with built-in diode —
Drain-to-Source Voltage (Vdss) 120 V —
Continuous Drain Current (Id) at Tc=25C 56 A —
Continuous Drain Current (Id) at Ta 56 A (Ta, per DigiKey listing) —
Power Dissipation (Pd) at Tc=25C 107 W —
Rango de temperatura de funcionamiento [DATA_NEEDED: Tj max and operating range] —
Encapsulado PG-TO220-3 (through-hole) TO-220-3 (PG-TO220-3), through-hole
Tipo de montaje Through Hole Through Hole
Número de pines 3 (3+Tab) —
Gate Charge (Qg) [DATA_NEEDED: typical Qg value] —
Rds(on) max [DATA_NEEDED: Rds(on) max in mOhm at Vgs=10V] —
Vgs(th) (Gate Threshold) [DATA_NEEDED: typical gate threshold voltage] —
Input Capacitance (Ciss) [DATA_NEEDED: typical Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: typical Coss] —
Reverse Recovery (trr) [DATA_NEEDED: body-diode reverse recovery time] —
Avalanche Energy Rating Single-pulse avalanche rated —
Estado RoHS Compliant (per distributor listing suffixes XKSA1) Compliant
Lead-Free Yes Yes
Qualification Automotive grade (per datasheet.live listing 'Automotive') —
Packing Method Tube —
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID max, Tc) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on) max) — 20 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Total Power Dissipation (Ptot max, Tc=25C) — 150 W
Channel Type — N-Channel
Rango de temperatura de unión de funcionamiento — -55 C to +175 C
Nivel MSL — Not Applicable (through-hole)

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