IQD005N04NM6CGATMA1 vs ISC058N04NM5ATMA1 Comparación
Comparación detallada lado a lado de IQD005N04NM6CGATMA1 por Infineon y ISC058N04NM5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQD005N04NM6CGATMA1 | ISC058N04NM5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,62 | $0,60 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 5 trench MOSFET |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) Typical | 0.5 mΩ | — |
| Continuous Drain Current (ID) at Ta | 58 A | — |
| Continuous Drain Current (ID) at Tc | 610 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 333 W | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (TJ) | -55C to +175C |
| Encapsulado | PG-TTFN-9-U02 (Source-Down 5x6 mm²) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 9 | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 40V Normal Level |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 63 A |
| Continuous Drain Current (ID, Ta=25C) | — | 17 A |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | — | 5.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.4 V |
| Power Dissipation (TA=25C) | — | 3 W |
| Power Dissipation (TC=25C) | — | 42 W |
| RoHS Compliance | — | RoHS Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL per JEDEC J-STD-020 |
| Gate Drive Level | — | Normal Level (10V VGS recommended) |