IQDH35N03LM5SCATMA1 vs IQE020N04LM6CGSCATMA1 Comparación
Comparación detallada lado a lado de IQDH35N03LM5SCATMA1 por Infineon y IQE020N04LM6CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ ActivoInfineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQDH35N03LM5SCATMA1 | IQE020N04LM6CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,05 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS 6 trench |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 278 W | — |
| Encapsulado | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C | -55 °C to +150 °C (junction, per Infineon MOSFET convention) |
| Nivel MSL | 1 (unlimited) | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) |
| Estado RoHS | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| Part Family | — | OptiMOS 6 low-voltage power MOSFET |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current at TA=25°C | — | 25 A |
| Continuous Drain Current at TC=25°C | — | 166 A |
| Maximum RDS(on) | — | 2.0 mΩ (per IQE part-number decode) |
| Power Dissipation at TA=25°C | — | 2.5 W |
| Power Dissipation at TC=25°C | — | 107 W |
| Recuento de pines | — | 9 |
| Lead-Free | — | Yes |