IQDH88N06LM5CGSCATMA1 vs IQD020N10NM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQDH88N06LM5CGSCATMA1 por Infineon y IQD020N10NM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQDH88N06LM5CGSCATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,31 | $3,20 |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Corriente de drenador continua (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Disipación de potencia (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C (TJ) | — |
| Encapsulado | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| Estado RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 100V (IQD series) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 276 A |
| Continuous Drain Current (ID, Ta) | — | 26 A |
| On-Resistance (RDS(on), max) | — | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | — | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.8 V |
| Gate Charge (Qg, total) | — | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | — | 7.3 nF |
| Output Capacitance (Coss) | — | 1 nF |
| Reverse Transfer Capacitance (Crss) | — | 42 pF |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Gate Drive Level | — | Logic-level (10 V VGS rated) |