IQE008N03LM5CGSCATMA1 vs BSC076N04NDATMA1 Comparación
Comparación detallada lado a lado de IQE008N03LM5CGSCATMA1 por Infineon y BSC076N04NDATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE008N03LM5CGSCATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,10 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Configuration | Dual N-Channel MOSFET Array | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 4 V (max, typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) | — |
| Encapsulado | PG-WHTFN-9 (WHTFN) | — |
| Tipo de montaje | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Trench MOSFET (OptiMOS 3) |
| Polarity | N-Channel | — |
| Número de pines | 9 (WHTFN with exposed thermal pads) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | — |
| Estado RoHS | Compliant | — |
| Sin halógenos | Yes (Infineon standard for OptiMOS 5) | — |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) max | — | 40 V |
| Continuous Drain Current (ID) | — | 20 A (Tc) |
| On-Resistance RDS(on) max | — | 7.6 mOhm |
| Power Dissipation (Ta) | — | 2.3 W |
| Power Dissipation (Tc) | — | 65 W |
| Qgd/Qgs Ratio | — | < 0.8 (high shot-through immunity) |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Encapsulado / Carcasa | — | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | — | Compliant (Pb-free plating) |
| FET Type | — | 2x N-Channel MOSFET array |