IQE008N03LM5SCATMA1 vs IQE065N10NM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQE008N03LM5SCATMA1 por Infineon y IQE065N10NM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IQE008N03LM5SCATMA1 | IQE065N10NM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $1,28 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS 5 trench-gate |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage | 10 V (recommended) | — |
| Encapsulado | PG-WHSON-8 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| Configuration | Single N-Channel | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | -55 C to +150 C |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Series | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25 C | — | 85 A |
| Continuous Drain Current (ID) at TA | — | 13 A |
| On-Resistance (RDS(on)) max at VGS=10V | — | 6.5 mOhm |
| Power Dissipation at TA | — | 2.5 W |
| Power Dissipation at TC | — | 100 W |
| Lead-Free | — | Yes |