IQE036N08NM6CGSCATMA1 vs IQE050N08NM5CGATMA1 Comparación
Comparación detallada lado a lado de IQE036N08NM6CGSCATMA1 por Infineon y IQE050N08NM5CGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ ActivoInfineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE036N08NM6CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,88 | $1,75 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado / Carcasa | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | OptiMOS 5 (Source-Down) |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction, per datasheet derating curves) | — |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| Estado RoHS | Compliant | Compliant |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Encapsulado | — | PG-TTFN-9-1 (Surface Mount) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Temperatura de funcionamiento | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |