IQE065N10NM5CGSCATMA1 vs IQD020N10NM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQE065N10NM5CGSCATMA1 por Infineon y IQD020N10NM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQD020N10NM5CGSCATMA1 - 100V 276A N-Channel MOSFET | Infineon
IQD020N10NM5CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE065N10NM5CGSCATMA1 | IQD020N10NM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,28 | $3,20 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | — |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Encapsulado | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-U02 (PQFN 5x6 mm) with exposed thermal pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 5 100V (IQD series) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 276 A |
| Continuous Drain Current (ID, Ta) | — | 26 A |
| On-Resistance (RDS(on), max) | — | 2.0 mOhm at VGS = 10 V |
| On-Resistance (RDS(on)) - JLCPCB listing | — | 1.8 mOhm at VGS = 10 V |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.8 V |
| Gate Charge (Qg, total) | — | 107 nC at VGS = 10 V |
| Input Capacitance (Ciss) | — | 7.3 nF |
| Output Capacitance (Coss) | — | 1 nF |
| Reverse Transfer Capacitance (Crss) | — | 42 pF |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 333 W |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Gate Drive Level | — | Logic-level (10 V VGS rated) |