IQEH54NE2LM7UCGATMA1 vs IQEH68NE2LM7UCGATMA1 Comparación
Comparación detallada lado a lado de IQEH54NE2LM7UCGATMA1 por Infineon y IQEH68NE2LM7UCGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ ActivoInfineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQEH54NE2LM7UCGATMA1 | IQEH68NE2LM7UCGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,95 | $1,35 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | 406 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 150 W | — |
| Encapsulado | PG-TTFN-9-3 | PG-TTFN-9-3 (surface mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | — |
| Rango de temperatura de funcionamiento | -55C to +150C (typical MOSFET range) | -55 °C to +175 °C (typical for OptiMOS 7) |
| Estado RoHS | Compliant | Compliant (per distributor listing) |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Series | — | OptiMOS 7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta | — | 47 A |
| Pulsed Drain Current (IDM) @ Tc | — | 338 A |
| Power Dissipation (PD) @ Ta | — | 2.5 W |
| Power Dissipation (PD) @ Tc | — | 130 W |
| Gate Threshold Voltage Type | — | Logic-level (per OptiMOS 7 family) |
| On-Resistance Family | — | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) |
| Maximum Junction Temperature | — | 175 °C |
| Technology | — | OptiMOS 7 trench MOSFET |
| Packaging | — | Tape & Reel (per ATMA1 suffix) |