IR2110STRPBF vs IRS2110STRPBF Comparación
Comparación detallada lado a lado de IR2110STRPBF por Infineon y IRS2110STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IR2110STRPBF | IRS2110STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,35 | $1,42 |
| Función | Half-Bridge Gate Driver | — |
| Number of Drivers | 2 (High-Side + Low-Side) | 2 (High-Side and Low-Side) |
| Driven Configuration | Half-Bridge | — |
| Channel Type | Independent, Synchronous | — |
| Tipo de salida | Non-Inverting | Non-Inverting |
| Peak Output Current (Source/Sink) | 2.5 A / 2.5 A | — |
| Offset Voltage (High-Side, max) | 500 V | — |
| Supply Voltage (VCC) | 10 V to 20 V | — |
| Logic Input Compatibility | CMOS / LSTTL, down to 3.3 V logic | CMOS/TTL compatible (3.3 V logic compatible) |
| Input Threshold | Logic-level compatible (3.3 V / 5 V) | — |
| Undervoltage Lockout (UVLO) | Yes (both VCC and VBS) | — |
| Bootstrap Supply | Required for high-side channel | — |
| Rise Time (Typ) | 25 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions] | — |
| Fall Time (Typ) | 17 ns (at 1 nF load) [DATA_NEEDED: per-datasheet spec conditions] | — |
| Propagation Delay (Typ) | [DATA_NEEDED: per-datasheet spec conditions] | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | 16-SOIC (SOIC W / 2110-S16) | 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED] | 3 (168 hours) |
| Estado RoHS | Compliant (Pb-free, PBF suffix) | — |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | [DATA_NEEDED: AEC-Q100 status] | — |
| Driver Configuration | — | Half-Bridge |
| Número de salidas | — | 2 |
| Maximum Offset Voltage | — | 500 V |
| Gate Drive Supply (VCC) | — | 10 V to 20 V |
| Source/Sink Output Current (typ.) | — | 2.5 A / 2.5 A |
| Propagation Delay ton/toff (typ.) | — | 30 ns / 30 ns |
| Rise/Fall Time (typ.) | — | 17 ns / 25 ns |
| Bootstrap Diode | — | Integrated |
| Shutdown Input | — | Active-low, forces both outputs low |
| Undervoltage Lockout | — | Yes (VCC and VBS) |
| Temperatura de funcionamiento | — | -40 C to +150 C |
| Lead-Free / RoHS | — | Lead-Free, RoHS Compliant |