IRF5305PBF vs IRFU5305PBF Comparación
Comparación detallada lado a lado de IRF5305PBF por Infineon y IRFU5305PBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF5305PBF | IRFU5305PBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,51 | $0,68 |
| FET Type | P-Channel | — |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | -110 A (pulsed) |
| Maximum Power Dissition (PD) at TC=25C | 110 W | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | 60 mOhm (typical) | — |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | [DATA_NEEDED: max RDS(on) at -10V] | — |
| Total Gate Charge (Qg) | 42 nC (typical) | 42 nC (typical) |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Turn-On Delay Time (td(on)) | [DATA_NEEDED: td(on)] | — |
| Turn-Off Delay Time (td(off)) | [DATA_NEEDED: td(off)] | — |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC] | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | [DATA_NEEDED: RthJA] | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55 °C to +175 °C |
| Encapsulado | TO-220AB (through-hole, 3-pin + tab) | IPAK (TO-251AA) Through-Hole, 3 pins |
| Tipo de montaje | Through Hole | Through Hole |
| Lead-Free Plating (PBF suffix) | Yes (Pb-free) | — |
| Estado RoHS | Compliant | — |
| Technology | HEXFET (planar DMOS) | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at Tc | — | -31 A |
| On-Resistance RDS(on) max @ VGS=-10V | — | 65 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (PD) at Tc=25°C | — | 110 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 1.36 °C/W |
| Thermal Resistance Junction-to-Ambient (RθJA) | — | 62 °C/W |
| Avalanche Rated | — | Yes (EAS rated) |
| RoHS Compliance | — | Compliant |