IRF5305STRRPBF vs IRF4905STRRPBF Comparación
Comparación detallada lado a lado de IRF5305STRRPBF por Infineon y IRF4905STRRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF5305STRRPBF | IRF4905STRRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,94 |
| Tipo de transistor | P-Channel MOSFET | — |
| Technology | HEXFET (Advanced Process) | HEXFET (Advanced Process) |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max @ VGS=-10V | 60 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | -2.0 V to -4.0 V |
| Power Dissipation (TC) | 110 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55 C to +175 C |
| Encapsulado | D2PAK (TO-263) Surface Mount | D2PAK (TO-263-3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) | — |
| Packaging | Tape & Reel (TR) | — |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Total Gate Charge (Qg) | — | 120 nC |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |