IRF9Z34NPBF vs IRLU024NPBF Comparación
Comparación detallada lado a lado de IRF9Z34NPBF por Infineon y IRLU024NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF9Z34NPBF | IRLU024NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,65 | $0,61 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | — |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Rango de temperatura de funcionamiento | -55C to +175C (junction) | — |
| Encapsulado | TO-220AB (through-hole, 3-pin) | IPAK (TO-251AA), Through Hole |
| Tipo de montaje | Through Hole | Through Hole |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | HEXFET Power MOSFET (5th generation) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| Estado RoHS | Compliant | — |
| Part Number | — | IRLU024NPBF |
| FET Type | — | N-Channel, Logic-Level |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Total Gate Charge (Qg) | — | 10 nC (typical, per listing) |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 110 C/W (50 C/W PCB-mounted) |
| Temperatura de unión de funcionamiento | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free plating) |
| Qualification | — | JEDEC standard |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |