IRFH5015TRPBF vs ISC045N03L5SATMA1 Comparación
Comparación detallada lado a lado de IRFH5015TRPBF por Infineon y ISC045N03L5SATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFH5015TRPBF | ISC045N03L5SATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,51 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | OptiMOS 5 / Trench |
| Drain-Source Voltage (VDS) | 150 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | 13 nC @ VGS=10 V |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Encapsulado | 8-PQFN (5x6) SuperSO8 | SuperSO8 5x6 (PG-TDSON-8-6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| Temperatura de funcionamiento | -55C to +150C (TJ max) | — |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | ISC045N03L5SATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 18 A |
| Continuous Drain Current (ID) at TC=25°C | — | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.5 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 2 V @ ID=250 µA |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Input Capacitance (Ciss) | — | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 30 W |
| Rango de temperatura de funcionamiento | — | -55 °C to +150 °C |