IRFH5020TRPBF vs BSC014N04LSATMA1 Comparación
Comparación detallada lado a lado de IRFH5020TRPBF por Infineon y BSC014N04LSATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFH5020TRPBF | BSC014N04LSATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,74 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Product Family | HEXFET Power MOSFET | — |
| FET Type | MOSFET N-Channel, Metal Oxide | — |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A | — |
| Pulsed Drain Current (IDM) | 63 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 55 mΩ | — |
| Gate Charge (Qg) typ | 11 nC | — |
| Power Dissipation (TA=25°C) | 3.6 W | — |
| Disipación de potencia (TC=25°C) | 8.3 W | — |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W | — |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C (TJ max) | -55C to +175C |
| Qualification Standard | JEDEC (Normal level) | — |
| Gate Drive Optimization | 10 V VGS | — |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | — |
| Nivel MSL | 1 (per industry standard for PQFN-8) | 1 (unlimited) |
| Series | — | OptiMOS 5 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Encapsulado | — | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |
| Estado RoHS | — | Compliant |