IRFR1205TRPBF vs IRFR5305TRPBF Comparación
Comparación detallada lado a lado de IRFR1205TRPBF por Infineon y IRFR5305TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR1205TRPBF | IRFR5305TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,49 | $0,32 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, 5th generation) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 44 A | 31 A |
| Pulsed Drain Current (IDM) | 160 A | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max | — |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | — |
| Total Gate Charge (Qg) | 43.3 nC | — |
| Power Dissition (PD) at TC=25C | 107 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant (PBF suffix = lead-free) | Compliant (Pb-free PBF suffix) |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen status] | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) Max | — | -55 V |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | — | 65 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gate Charge (Qg) Typ | — | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25C | — | 110 W |
| Single-Pulse Avalanche Energy (EAS) | — | 270 mJ |
| Rango de temperatura de funcionamiento | — | -55 C to +175 C |
| Nivel MSL | — | 1 |
| Lead-Free Finish | — | Yes (PBF suffix) |