IRFR4620TRLPBF vs IRFR3607TRPBF Comparación
Comparación detallada lado a lado de IRFR4620TRLPBF por Infineon y IRFR3607TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR4620TRLPBF | IRFR3607TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,72 | $0,39 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) | 24 A at Tc | — |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | — |
| Gate Charge (Qg) | 25 nC typical | — |
| Power Dissipation (PD) | 144 W at Tc | — |
| Technology | IR MOSFET | IR HEXFET (planar DMOS) |
| Encapsulado / Carcasa | TO-252AA (DPAK) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +175C | — |
| Lead Free | Yes | — |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 (Unlimited) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID, Tc) | — | 56 A |
| Calculated Die Drain Current | — | 80 A |
| On-State Resistance (RDS(on)) | — | 9 mOhm @ VGS=10V, ID=46A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 56 nC |
| Gate-to-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD, Tc) | — | 140 W |
| Thermal Resistance (RthJC) | — | 1.0 C/W |
| Rango de temperatura de funcionamiento | — | -55C to +175C (TJ max 175C per datasheet convention) |
| Encapsulado | — | TO-252AA (DPAK) |
| Avalanche SOA | — | Fully characterized |
| RoHS / Lead-Free | — | Compliant / Pb-free (PBF suffix, JESD-609 e3) |