IRFR9024NTRPBF vs IRLU024NPBF Comparación
Comparación detallada lado a lado de IRFR9024NTRPBF por Infineon y IRLU024NPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR9024NTRPBF | IRLU024NPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,17 | $0,61 |
| Polarity | P-Channel | — |
| VDS (Drain-Source Voltage) | -55 V | — |
| Continuous Drain Current (Tc=25C) | -11 A | — |
| Corriente de drenador pulsada | [DATA_NEEDED: pulsed drain current] | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Threshold Voltage) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) Max at VGS=-10V | 175 mOhm | — |
| Total Gate Charge (Qg) | 12.7 nC | 10 nC (typical, per listing) |
| Maximum Power Dissipation (Tc=25C) | 38 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | TO-252AA (DPAK) | IPAK (TO-251AA), Through Hole |
| Tipo de montaje | Surface Mount | Through Hole |
| Recuento de pines | 3 | — |
| Technology | HEXFET (Gen 5) | HEXFET Power MOSFET (5th generation) |
| Estado RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLU024NPBF |
| FET Type | — | N-Channel, Logic-Level |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 17 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 65 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Power Dissipation (PD) at TC=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 3.3 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | 110 C/W (50 C/W PCB-mounted) |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free plating) |
| Qualification | — | JEDEC standard |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |