IRLH5030TRPBF vs IRFH7084TRPBF Comparación
Comparación detallada lado a lado de IRLH5030TRPBF por Infineon y IRFH7084TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLH5030TRPBF | IRFH7084TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,15 | $0,45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLH5030TRPBF | — |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | StrongIRFET™ (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TA=25C | 13 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | — |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| Encapsulado | PQFN-8 (SuperSO8 5x6 mm) | 8-PQFN 5x6 mm (SuperSO8) |
| Profile Height | ≤ 0.9 mm | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | — | 100 A |
| Silicon-Limited Drain Current | — | 265 A |
| Power Dissipation (PD, Tc=25°C) | — | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | — | 0.95 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | — | 6560 pF |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (TJ) |
| Nivel MSL | — | 1 |
| Estado RoHS | — | Compliant |
| Sin halógenos | — | Compliant |
| RthJC max | — | 0.96 °C/W (per datasheet) |