IRLML0030TRPBF vs IRLL024NTRPBF Comparación
Comparación detallada lado a lado de IRLML0030TRPBF por Infineon y IRLL024NTRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLML0030TRPBF | IRLL024NTRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,13 | $0,22 |
| FET Type | N-Channel | MOSFET, Metal Oxide |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | 10.4 nC |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Rango de temperatura de funcionamiento | -55C to +150C | — |
| Encapsulado | Micro3 / SOT-23 (3-pin) | SOT-223 (4-pin) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET Power MOSFET |
| Nivel MSL | 1 (unlimited floor life per JEDEC J-STD-020) | — |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| Estado RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Pulsed Drain Current (IDM) | — | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Gate Threshold Voltage (VGS(th)) | — | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |