IRLR3110ZTRPBF vs IRLR3110ZTRLPBF Comparación
Comparación detallada lado a lado de IRLR3110ZTRPBF por Infineon y IRLR3110ZTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRLR3110ZTRPBF | IRLR3110ZTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,66 | $0,65 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max @ VGS=10V | 14 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | 15 nC | — |
| Power Dissipation (PD) at TC=25C | 140 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | -55C to +175C |
| Encapsulado | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | IR HEXFET / Trench MOSFET |
| Nivel MSL | 1 (Unlimited) | [DATA_NEEDED: MSL Level] |
| Estado RoHS | Compliant | Compliant (PBF suffix) |
| Lead-Free Plating | Yes (PBF suffix) | — |
| Sin halógenos | Yes | — |
| Transistor Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 42 A |
| Maximum Drain Current (ID max) | — | 63 A |
| On-Resistance (RDS(on) max) | — | 14 mOhm |
| Gate Charge (Qg) | — | 34 nC |
| Gate Drive Level | — | Logic-Level |
| Power Dissipation (PD) at TC | — | 140 W |
| Recuento de pines | — | 3 (Drain, Gate, Source + Tab) |
| Repetitive Avalanche Rated | — | Yes |