IRS2181STRPBF vs IR2117STRPBF Comparación
Comparación detallada lado a lado de IRS2181STRPBF por Infineon y IR2117STRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRS2181STRPBF | IR2117STRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,62 | $0,58 |
| Función | Half-Bridge Gate Driver | Gate Driver, Non-Inverting |
| Configuration | High-side and low-side referenced, non-inverting | High-Side Single Channel |
| Número de salidas | 2 (HO, LO) | 1 |
| Offset Voltage (max) | 600 V | — |
| VCC Supply Voltage | 10 V to 20 V | — |
| VBS Bootstrap Supply Voltage | 10 V to 20 V (referenced to VS) | — |
| Output Source Current (typ) | 1.9 A | — |
| Output Sink Current (typ) | 2.3 A | — |
| Rise / Fall Time (typ) | [DATA_NEEDED: typical rise/fall time with 1000 pF load] | — |
| Propagation Delay (typ) | [DATA_NEEDED: t_on / t_off matching] | — |
| Logic Input Compatibility | 3.3 V and 5 V logic | — |
| Under-Voltage Lockout (UVLO) | Present on VCC and VBS | — |
| Shutdown Pin (SD) | Yes, active-low compatible input stage | — |
| Rango de temperatura de funcionamiento | -40 C to +125 C (junction) | -40 C to +125 C |
| Encapsulado | 8-pin SOIC (SO-8, 0.154" / 3.90 mm body width) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead Finish | Pb-free (PBF suffix) | — |
| Nivel MSL | MSL 2 / 3 (per JEDEC J-STD-020, [DATA_NEEDED: exact MSL floor-life]) | MSL3 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant (Pb-free) | — |
| Input Logic Compatibility | — | CMOS / TTL |
| Driven Device | — | N-Channel MOSFET / IGBT |
| Gate Drive Supply Voltage (VCC) | — | 10 V to 20 V |
| Floating Channel Offset Voltage | — | up to +600 V |
| Peak Source Current (IOUT+) | — | 250 mA |
| Peak Sink Current (IOUT-) | — | 500 mA |
| Propagation Delay (Ton/Toff) | — | 125 ns (max) |
| Tiempo de subida | — | 80 ns (typ) |
| Tiempo de bajada | — | 40 ns (typ) |
| Undervoltage Lockout (UVLO) | — | Yes |
| Negative Transient Voltage Tolerance | — | Yes, dV/dt immune |
| Encapsulado / Carcasa | — | 8-SOIC (0.154 inch / 3.90 mm width) |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |