ISC016N08NM8ATMA1 vs IAUCN08S7N034ATMA1 Comparación
Comparación detallada lado a lado de ISC016N08NM8ATMA1 por Infineon y IAUCN08S7N034ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC016N08NM8ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,02 | $1,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | — |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction) | — |
| Encapsulado | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | PG-TDSON-8-34 (TDSON EP) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | MSL 1 (unlimited floor life) |
| Series | — | OptiMOS™ 7 |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | — | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | — | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 23 pF |
| Power Dissipation (P<sub>D</sub>) | — | 118 W |
| Temperatura de unión de funcionamiento | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 |