ISC016N08NM8ATMA1 vs ISC110N12NM6ATMA1 Comparación
Comparación detallada lado a lado de ISC016N08NM8ATMA1 por Infineon y ISC110N12NM6ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC016N08NM8ATMA1 | ISC110N12NM6ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,02 | $0,51 |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS 8 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS max) | 80 V | — |
| Gate-Source Voltage (VGS max) | +/-20 V (typical rating) | — |
| Continuous Drain Current (ID) at Ta | 29 A | 11 A |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: pulsed/continuous current rating at Tc] | 62 A |
| Pulsed Drain Current (IDM) at Tc | 268 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 263 W | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 1.6 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction) | — |
| Encapsulado | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) | SuperSO8 (TDSON-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | Trench-gate OptiMOS 8 (silicon) | — |
| Estado RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Lead-free (per Infineon product page) | — |
| Nivel MSL | 1 (per JEDEC J-STD-020E classification for SuperSO8) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 120 V |
| On-Resistance RDS(on) max at VGS=10V | — | 9.8 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.1 V |
| Total Gate Charge (Qg) | — | 15.4 nC |
| Input Capacitance (Ciss) | — | 1.1 nF |
| Output Capacitance (Coss) | — | 330 pF |
| Reverse Transfer Capacitance (Crss) | — | 10 pF |
| Power Dissipation (Pd) at Tc | — | 94 W |
| Power Dissipation (Pd) at Ta | — | 3 W |
| Avalanche Energy (EAS) | — | 185 mJ |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |