ISC045N03L5SATMA1 vs IQE008N03LM5CGATMA1 Comparación
Comparación detallada lado a lado de ISC045N03L5SATMA1 por Infineon y IQE008N03LM5CGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC045N03L5SATMA1 | IQE008N03LM5CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,51 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC045N03L5SATMA1 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 / Trench | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25°C | 18 A | — |
| Continuous Drain Current (ID) at TC=25°C | 63 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 µA | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | — |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 30 W | — |
| Encapsulado | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 °C to +150 °C | -55C to +150C (junction) |
| Estado RoHS | Compliant | — |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 27 A |
| Continuous Drain Current (ID) at Tc=25C | — | 253 A |
| On-Resistance (RDS(on)) at VGS=10V | — | 0.85 mOhm (typ) @ 20 A |
| Gate-Source Voltage (VGS) Max | — | +/-16 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Total Gate Charge (Qg) at VGS=10V | — | 64 nC (typ) |
| Input Capacitance (Ciss) at VDS=15V | — | 5700 pF (typ) |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss typical] |
| Reverse Transfer Capacitance (Crss) | — | [DATA_NEEDED: Crss typical] |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 89 W |
| Lead-Free / RoHS | — | Yes (compliant per Infineon product page) |
| AEC-Q100 Automotive | — | [DATA_NEEDED: AEC-Q100 qualification status] |