ISC058N04NM5ATMA1 vs IQD005N04NM6CGATMA1 Comparación
Comparación detallada lado a lado de ISC058N04NM5ATMA1 por Infineon y IQD005N04NM6CGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISC058N04NM5ATMA1 - 40V 63A 5.8mOhm OptiMOS 5 N-MOSFET | Infineon
ISC058N04NM5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISC058N04NM5ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,60 | $1,62 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 40V Normal Level | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 63 A | — |
| Continuous Drain Current (ID, Ta=25C) | 17 A | — |
| On-Resistance Rds(on) max @ VGS=10V, ID=31A | 5.8 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.4 V | — |
| Power Dissipation (TA=25C) | 3 W | — |
| Power Dissipation (TC=25C) | 42 W | — |
| Encapsulado | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 6 (trench FET) |
| Rango de temperatura de funcionamiento | -55C to +175C | -55 °C to +150 °C (TJ) |
| RoHS Compliance | RoHS Compliant | — |
| MSL (Moisture Sensitivity Level) | MSL per JEDEC J-STD-020 | — |
| Gate Drive Level | Normal Level (10V VGS recommended) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| Recuento de pines | — | 9 |
| Nivel MSL | — | [DATA_NEEDED: MSL rating] |
| Estado RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |