ISC110N12NM6ATMA1 vs ISC016N08NM8ATMA1 Comparación
Comparación detallada lado a lado de ISC110N12NM6ATMA1 por Infineon y ISC016N08NM8ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | ISC110N12NM6ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,51 | $1,02 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID) at Ta | 11 A | 29 A |
| Continuous Drain Current (ID) at Tc | 62 A | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| On-Resistance RDS(on) max at VGS=10V | 9.8 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.1 V | — |
| Total Gate Charge (Qg) | 15.4 nC | — |
| Input Capacitance (Ciss) | 1.1 nF | — |
| Output Capacitance (Coss) | 330 pF | — |
| Reverse Transfer Capacitance (Crss) | 10 pF | — |
| Power Dissipation (Pd) at Tc | 94 W | — |
| Power Dissipation (Pd) at Ta | 3 W | — |
| Avalanche Energy (EAS) | 185 mJ | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | SuperSO8 (TDSON-8) | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 8 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C (junction) |
| Technology | — | Trench-gate OptiMOS 8 (silicon) |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |
| Nivel MSL | — | 1 (per JEDEC J-STD-020E classification for SuperSO8) |