ISL43240IRZ vs DG441DYZ Comparación
Comparación detallada lado a lado de ISL43240IRZ por Renesas Electronics y DG441DYZ por Renesas Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Renesas Electronics
DG441DYZ - Quad SPST CMOS Analog Switch, 85Ω, 16-SOIC | Renesas
DG441DYZ ✓ ActivoComparación de especificaciones
| Parámetro | ISL43240IRZ | DG441DYZ |
|---|---|---|
| Marca | Renesas Electronics | Renesas Electronics |
| Categoría | Interface ICs | Interface ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,65 | $1,62 |
| Función | Quad SPDT Analog Switch (4x SPDT) | — |
| Number of Channels | 4 circuits, Switch 2:1 (SPDT) | — |
| On-Resistance (Ron) | 25 Ω typical | 85 Ω (typical) |
| Ron Flatness | 5 Ω maximum | — |
| Single-Supply Range | +2 V to +12 V | — |
| Dual-Supply Range | ±2 V to ±6 V | — |
| Switching Time tON | 52 ns | — |
| Switching Time tOFF | 40 ns | — |
| Leakage Current | 5 nA maximum | — |
| Power Consumption | 5 µW typical | — |
| Logic Input Compatibility | TTL/CMOS, VIH ≥ 1.65 V, VIL ≤ 0.5 V | TTL and CMOS, with on-chip Vref threshold translator |
| Temperatura de funcionamiento | -40 °C to +85 °C (Industrial) | -40 °C to +85 °C |
| Encapsulado | 20-QFN (4x4 mm) | 16-SOIC (0.154" / 3.90 mm width) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant (per Heisener listing) |
| Switch Type | — | SPST (Single-Pole Single-Throw), 4 independent channels |
| Number of Circuits | — | 4 |
| On-Resistance Flatness | — | [DATA_NEEDED: Ron flatness] |
| Supply Voltage (Single) | — | +5 V to +34 V |
| Supply Voltage (Dual) | — | ±5 V to ±22 V |
| Maximum Signal Voltage | — | 44 V (allows 40 Vp-p signals) |
| Turn-On Time (tON) | — | 250 ns (typical) |
| Turn-Off Time (tOFF) | — | [DATA_NEEDED: tOFF] |
| Bandwidth (-3 dB) | — | 200 MHz (typical) |
| Channel-to-Channel Crosstalk | — | [DATA_NEEDED: crosstalk] |
| Off-Isolation | — | [DATA_NEEDED: off-isolation] |
| Leakage Current (Switch Off) | — | [DATA_NEEDED: Ioff] |
| Charge Injection | — | [DATA_NEEDED: QINJ] |
| Latch-up Protection | — | Yes (epitaxial CMOS process) |