ISZ028N03LF2SATMA1 vs ISC025N08NM5LF2ATMA1 Comparación
Comparación detallada lado a lado de ISZ028N03LF2SATMA1 por Infineon y ISC025N08NM5LF2ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 ✓ ActivoInfineon
ISC025N08NM5LF2ATMA1 - 80V 2.55mΩ Linear FET MOSFET | Infineon
ISC025N08NM5LF2ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | ISZ028N03LF2SATMA1 | ISC025N08NM5LF2ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,49 | $1,74 |
| FET Type | N-Channel | N-Channel |
| Technology | StrongIRFET 2 (Trench MOSFET) | MOSFET (Metal Oxide), OptiMOS 5 LF2 |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Tc | 128 A | — |
| Continuous Drain Current (ID) at Ta | 22 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (VGS(th)) | 2.35 V | — |
| On-Resistance (RDS(on)) max | 2.8 mΩ | — |
| Power Dissipation (Tc) | 83 W | — |
| Power Dissipation (Ta) | 3 W | — |
| Encapsulado | PG-TSDSON-8 FL (FL = flat lead) | PG-TDSON-8 FL (Surface Mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C (junction, typical) | [DATA_NEEDED: operating temperature range] |
| Gate Drive Voltage (recommended) | 10 V (logic level at 4.5 V) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Drain-Source Voltage (VDS) Max | — | 80 V |
| Continuous Drain Current (ID) @ TA=25°C | — | 23 A |
| Continuous Drain Current (ID) @ TC=25°C | — | 198 A |
| On-Resistance (RDS(on)) Max | — | 2.55 mΩ |
| Gate-Source Threshold (VGS(th)) Max | — | 3.9 V |
| Total Gate Charge (Qg) Max | — | 96 nC |
| Power Dissipation @ TA | — | 3 W |
| Power Dissipation @ TC | — | 217 W |
| Polarity | — | N-Channel |
| Ordering Code Suffix | — | ATMA1 (Tape & Reel, 13-inch) |