K3K9K90BM-JGCT vs K3K8K80BM-MGCP Comparación
Comparación detallada lado a lado de K3K9K90BM-JGCT por Samsung Electronics y K3K8K80BM-MGCP por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K3K9K90BM-JGCT - Samsung LPDDR5 SDRAM | Samsung Electronics
K3K9K90BM-JGCT ✓ Activo
Comparación de especificaciones
| Parámetro | K3K9K90BM-JGCT | K3K8K80BM-MGCP |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,20 | $0,00 |
| Tipo de memoria | LPDDR5 SDRAM | LPDDR5 SDRAM (DRAM) |
| Manufacturer | Samsung Electronics | — |
| Density | [DATA_NEEDED: Density] | 64 Gb |
| Organización de memoria | [DATA_NEEDED: Organization] | 2G x 32 |
| Velocidad de datos | [DATA_NEEDED: Data Rate] | 6400 Mbps |
| Supply Voltage (VDD) | [DATA_NEEDED: VDD] | — |
| Supply Voltage (VDDQ) | [DATA_NEEDED: VDDQ] | — |
| Interfaz | [DATA_NEEDED: Channel configuration] | LPDDR5 (CMOS) |
| Latencia CAS | [DATA_NEEDED: CAS Latency] | — |
| Refresh | [DATA_NEEDED: Refresh scheme] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | -25C to +85C |
| Package Type | FBGA | — |
| Package Code | BM | — |
| Speed/Temperature Grade Code | JGCT | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL Level] | — |
| Encapsulado | — | FBGA-315 (PBGA315) |
| Supply Voltages | — | 500 mV, 900 mV, 1.05 V, 1.8 V |
| Technology | — | CMOS |
| Memory Category | — | Volatile DRAM |
| Lead Free | — | Yes |
| Application Class | — | Specialized ICs / Memory |
| I/O Width | — | 32-bit |