K4A4G165WD-BCTD vs MT40A256M16GE-075E:B Comparación
Comparación detallada lado a lado de K4A4G165WD-BCTD por Samsung Electronics y MT40A256M16GE-075E:B por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K4A4G165WD-BCTD - 4Gb DDR4 SDRAM x16 2666Mbps | Samsung
K4A4G165WD-BCTD ✓ ActivoMicron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ ActivoComparación de especificaciones
| Parámetro | K4A4G165WD-BCTD | MT40A256M16GE-075E:B |
|---|---|---|
| Marca | Samsung Electronics | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $19,00 | $3,95 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organización de memoria | 256M x 16 | 256M x 16 |
| Velocidad de datos | 2666 Mbps/pin (-BCTD speed grade) | 2666 MT/s (DDR4-2666) |
| Supply Voltage (VDD) | 1.2 V | — |
| Core Supply (VPP) | 2.5 V | — |
| Interfaz | SSTL-12 | — |
| Data Mask | Yes (DM per byte lane) | — |
| Bank Architecture | 16 banks / 4 bank groups | — |
| Encapsulado | 96-ball FBGA | 96-FBGA (9 x 14 mm) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Temperatura de funcionamiento | 0C to +85C (commercial) | [DATA_NEEDED: operating temperature range for standard grade] |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes (external RZQ resistor) | — |
| CRC / CA Parity | CRC read/write support | — |
| Reset | Asynchronous reset (RESET_n) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Tamaño de memoria | — | 4 Gbit |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| Refresh | — | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |