K4A4G165WE-BCTD vs MT40A256M16GE-075E:B Comparación
Comparación detallada lado a lado de K4A4G165WE-BCTD por Samsung Electronics y MT40A256M16GE-075E:B por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ ActivoMicron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ ActivoComparación de especificaciones
| Parámetro | K4A4G165WE-BCTD | MT40A256M16GE-075E:B |
|---|---|---|
| Marca | Samsung Electronics | Micron Technology |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $11,38 | $3,95 |
| Tipo de memoria | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Tamaño de memoria | 4 Gbit | 4 Gbit |
| Memory Organization | 256M x 16 | — |
| Interfaz | Parallel, x16 | — |
| Supply Voltage (VDD) | 1.2 V (1.14 V to 1.26 V) | — |
| Die Generation | E-die | — |
| Encapsulado | FBGA-96 (TFBGA) | 96-FBGA (9 x 14 mm) |
| Terminal Count | 96 | — |
| Temperatura de funcionamiento | 0C to +85C | [DATA_NEEDED: operating temperature range for standard grade] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Speed Grade | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] | — |
| Estado RoHS | Compliant (per JLCPCB listing) | — |
| Product Status | Active | — |
| Datasheet Revision | K4A4G165WE Rev. 1.4, Jun. 2016 | — |
| Burst Length | BL8 (JEDEC DDR4) | — |
| Bank Group Architecture | Yes (DDR4) | — |
| Organización de memoria | — | 256M x 16 |
| Memory Interface | — | Parallel |
| Clock Frequency | — | 1.33 GHz |
| Velocidad de datos | — | 2666 MT/s (DDR4-2666) |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| Internal Banks | — | 16 |
| Refresh | — | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C |
| I/O Type | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die, internal, adjustable generation |
| Special Features | — | Temperature controlled refresh (TCR) |
| Access Time | — | [DATA_NEEDED: CAS latency / access time] |