K4AAG165WA-BCPB vs K4A8G165WC-BCPB Comparación
Comparación detallada lado a lado de K4AAG165WA-BCPB por Samsung Electronics y K4A8G165WC-BCPB por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K4AAG165WA-BCPB - 16Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4AAG165WA-BCPB ✓ ActivoSamsung Electronics
K4A8G165WC-BCPB - 8Gb DDR4-2133 SDRAM 96-FBGA | Samsung
K4A8G165WC-BCPB ✓ ActivoComparación de especificaciones
| Parámetro | K4AAG165WA-BCPB | K4A8G165WC-BCPB |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $63,79 | $1,31 |
| Tipo de memoria | Volatile DRAM (DDR4 SDRAM) | DDR4 SDRAM (volatile DRAM) |
| Technology | DDR4 | — |
| Density | 16 Gb | — |
| Organización de memoria | 1G x 16 | — |
| Velocidad de datos | 3200 Mbps | DDR4-2133 (2133 Mbps/pin) |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface Voltage (VDDQ) | 1.2 V | — |
| Encapsulado | FBGA-96 | 96-ball FBGA (TFBGA) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature for BCPB grade] | 0C to +95C |
| Memory Format | DRAM | — |
| Packaging | Tray | — |
| Product Status | Active | — |
| Power Consumption | 25% lower than DDR3 (per Samsung DDR4 family) | — |
| Bank Group Architecture | Yes (DDR4 internal bank groups) | — |
| On-Die Termination (ODT) | Yes | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Max Capacity Family | Up to 32GB component (Samsung DDR4 family) | — |
| Tamaño de memoria | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Tensión de alimentación | — | 1.2 V |
| Operating Voltage Range | — | 1.14 V to 1.26 V |
| Interfaz | — | DDR4 (16-bit data bus) |
| Die Generation | — | C-die (1Y nm class) |
| Características | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Termination | — | On-die termination (ODT), dynamic |
| Nivel MSL | — | [DATA_NEEDED: MSL Level] |
| Standard | — | JEDEC DDR4 SDRAM |