K6X1008C2D-GF70 vs K6X1008C2D-BF70 Comparación
Comparación detallada lado a lado de K6X1008C2D-GF70 por Samsung Electronics y K6X1008C2D-BF70 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K6X1008C2D-GF70 - 1Mbit 70ns 32-SOP Low Power SRAM | Samsung
K6X1008C2D-GF70 ObsoleteSamsung Electronics
K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
K6X1008C2D-BF70 NrndComparación de especificaciones
| Parámetro | K6X1008C2D-GF70 | K6X1008C2D-BF70 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Obsolete | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,30 | $1,28 |
| Tipo de memoria | Asynchronous SRAM (CMOS, Low Power) | Volatile SRAM (asynchronous, static) |
| Memory Density | 1 Mbit (128K x 8) | — |
| Organización de memoria | 128K x 8 | — |
| Access Time (tAA) | 70 ns | — |
| Operating Voltage (Vcc) | 4.5 V to 5.5 V | — |
| Operating Current (Icc) | 35 mA | — |
| Data Retention Voltage | [DATA_NEEDED: data retention voltage minimum VccDR] | — |
| Data Retention Current | [DATA_NEEDED: data retention current at 3 V / 2 V] | — |
| Rango de temperatura de funcionamiento | Commercial (I) / Automotive (a) - per ordering code | [DATA_NEEDED: temperature grade] |
| Encapsulado | 32-SOP (PDSO32, 0.525 inch, plastic) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Interfaz | Parallel, asynchronous | — |
| Tipo de salida | Three-state bidirectional | — |
| Input/Output Logic | TTL-compatible | — |
| Nivel MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status from manufacturer] | — |
| Process Technology | Samsung full CMOS (6T cell) | Low-power CMOS |
| Standby Mode | Chip Enable (CE) controlled | — |
| Memory Organization | — | 128K x 8 (1 Mbit total) |
| Number of Words | — | 131,072 |
| Bits per Word | — | 8 |
| Access Time | — | 70 ns |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Tipo de interfaz | — | Parallel, asynchronous |
| I/O Compatibility | — | TTL-compatible |
| Operating Mode | — | Fully static (no clock, no refresh) |
| Package Type | — | 32-SOP-525 (PDSO32) |
| Speed Grade Suffix | — | BF70 (= 70 ns) |
| Active Supply Current (ICC) | — | [DATA_NEEDED: ICC max] |
| CMOS Standby Current (ICC2) | — | [DATA_NEEDED: ICC2 max] |
| Output Enable (OE) Pin | — | Yes (three-state outputs) |
| Write Enable (WE) Pin | — | Yes |
| Chip Enable (CE) Pin | — | Yes |
| Lead-Free Finish | — | Yes (per datasheet revision history) |