K9CHGY8S5C-CCK0 vs K9PKGY8S7M-CCK0 Comparación
Comparación detallada lado a lado de K9CHGY8S5C-CCK0 por Samsung Electronics y K9PKGY8S7M-CCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9CHGY8S5C-CCK0 - Samsung NAND Flash Memory BGA-316 | Samsung
K9CHGY8S5C-CCK0 ✓ Activo
Comparación de especificaciones
| Parámetro | K9CHGY8S5C-CCK0 | K9PKGY8S7M-CCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $9,40 |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | NAND Flash Memory | — |
| Encapsulado | BGA-316 | BGA |
| Organización de memoria | x8 (8-bit data access), quad CE configuration | — |
| Chip Enable Count | 16 (CE_n) | — |
| Pin Reduction | Not used | — |
| Supply Rail VCC | 1.83 V | — |
| Supply Rail (secondary) | 1.84 V | — |
| Supply Rail VCCQ-class | 2.96 V | — |
| Program/Erase Supply Rail | 12 V domain | — |
| Memory Technology | [DATA_NEEDED: cell type / V-NAND generation] | — |
| Density | [DATA_NEEDED: total density in Gb] | — |
| Tipo de interfaz | [DATA_NEEDED: toggle DDR / ONFI, max data rate] | — |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tipo de montaje | Surface Mount (BGA reflow) | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Lead free / RoHS compliant |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance] | [DATA_NEEDED: P/E cycle endurance] |
| Memory Capacity | — | 128 Gb (16 GB) |
| Tipo de memoria | — | NAND Flash |
| Cell Architecture | — | 3D V-NAND, MLC (2 bits/cell) |
| V-NAND Layers | — | 24 layers |
| Interfaz | — | Asynchronous/toggle-mode NAND bus (per Samsung V-NAND family) |
| Tensión de alimentación | — | [DATA_NEEDED: supply voltage] |
| Block Size | — | [DATA_NEEDED: block size] |
| Application Domain | — | Enterprise SSD (e.g., Samsung 845DC Pro) |
| Access Time (tR) | — | [DATA_NEEDED: read cycle time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |