K9LUGY8J7D-CCK0 vs K9JUGY8J5C-BCK0 Comparación
Comparación detallada lado a lado de K9LUGY8J7D-CCK0 por Samsung Electronics y K9JUGY8J5C-BCK0 por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ ActivoComparación de especificaciones
| Parámetro | K9LUGY8J7D-CCK0 | K9JUGY8J5C-BCK0 |
|---|---|---|
| Marca | Samsung Electronics | Samsung Electronics |
| Categoría | Memory ICs | Flash |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,00 |
| Manufacturer | Samsung Electronics | — |
| Tipo de memoria | NAND Flash (V-NAND) | NAND Flash (V-NAND TLC) |
| Memory Cell Type | TLC (Triple-Level Cell) | — |
| Technology | V-NAND (vertical NAND) | Samsung V-NAND (3D) |
| Encapsulado | BGA (surface mount) | [DATA_NEEDED: FBGA ball count / package code] |
| Tipo de montaje | Surface Mount | Surface Mount |
| Interfaz | [DATA_NEEDED: interface type / toggle DDR mode] | [DATA_NEEDED: async/DDR or Toggle DDR interface and mode] |
| Density | [DATA_NEEDED: total density (bits)] | 1 Tb |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Tensión de alimentación | [DATA_NEEDED: supply voltage (V)] | — |
| Temperatura de funcionamiento | [DATA_NEEDED: temperature range (C)] | [DATA_NEEDED: operating temperature range] |
| Program/Erase Endurance | [DATA_NEEDED: P/E cycles] | — |
| Data Retention | [DATA_NEEDED: retention] | [DATA_NEEDED: retention specification] |
| Speed Grade Code | CCK0 (per Samsung part-number convention) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Cell Type | — | Triple-Level Cell (TLC) |
| Organización de memoria | — | [DATA_NEEDED: page/block organization] |
| Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Supply Voltage (VCCQ) | — | [DATA_NEEDED: VCCQ range] |
| Program Time (typ) | — | [DATA_NEEDED: tPROG] |
| Read Time (typ) | — | [DATA_NEEDED: tR] |
| Endurance (P/E cycles) | — | [DATA_NEEDED: program/erase endurance] |