M29W064FT70N3E vs M29W064FT70N3F Comparación
Comparación detallada lado a lado de M29W064FT70N3E por Micron Technology y M29W064FT70N3F por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W064FT70N3E | M29W064FT70N3F |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $6,30 |
| Tipo de memoria | NOR Flash (Parallel) | NOR Flash |
| Density | 64 Mbit | 64 Mbit |
| Organización de memoria | 8 Mb x8 or 4 Mb x16 | 8 Mbit x8 / 4 Mbit x16 |
| Interfaz | Parallel, CFI compliant | Parallel |
| Access Time | 70 ns | 70 ns |
| Tensión de alimentación | 2.7 V to 3.6 V | — |
| Boot Block Architecture | Top boot block (FT) | — |
| Temperatura de funcionamiento | -40C to +85C | -40C to +125C |
| Encapsulado | 48-TSOP | 48-TSOP I |
| Tipo de montaje | Surface Mount | Surface Mount |
| Programming Voltage | Single 3 V supply (no separate VPP required) | — |
| Erase/Program Method | Command-set page programming, block erase | — |
| Product Longevity Program | No | No |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Active Read Current | [DATA_NEEDED: active read supply current] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Estado RoHS | [DATA_NEEDED: RoHS compliance status] | unknown |
| Supply Voltage (VCC) | — | up to 3.6 V for program, erase, read |
| VPP Fast Program Voltage | — | 12 V (optional) |
| Boot Block Configuration | — | Top boot block (FT) |
| Programming Method | — | Command set / data polling / toggle bit |
| Block Protection | — | Yes, with temporary unprotection |
| Width | — | x8/x16 |