MPQ2222 vs MPQ2222-PBFREE Comparación
Comparación detallada lado a lado de MPQ2222 por Central Semiconductor y MPQ2222-PBFREE por Central Semiconductor. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ ActivoCentral Semiconductor
MPQ2222-PBFREE - Quad NPN BJT Array 40V 500mA TO-116 | Central Semiconductor
MPQ2222-PBFREE ✓ ActivoComparación de especificaciones
| Parámetro | MPQ2222 | MPQ2222-PBFREE |
|---|---|---|
| Marca | Central Semiconductor | Central Semiconductor |
| Categoría | Transistors | Transistors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,39 | $0,58 |
| Configuration | Quad NPN Transistor Array (4 independent devices) | — |
| Transistor Polarity | NPN Silicon | — |
| Tensión colector-base (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Tensión emisor-base (Vebo) | [DATA_NEEDED: VEBO exact value] | 6 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Frecuencia de transición (ft) | 200 MHz | 200 MHz |
| Power Dissipation (total package) | 650 mW | — |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: hFE min/max] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | — |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | — |
| Encapsulado | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin through-hole DIP) |
| Tipo de montaje | Through Hole | Through Hole |
| Marking | Full part number | — |
| Estado RoHS | Lead-free (PB Free suffix version available) | — |
| Tipo de transistor | — | 4 NPN (Quad) BJT Array |
| Tensión colector-emisor (Vceo) | — | 40 V |
| Max Collector Current (IC) | — | 500 mA |
| Power Dissipation (Pd) | — | 650 mW |
| Number of Elements | — | 4 |
| Polarity | — | NPN |
| Application | — | General Purpose Amplifier/Switch |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Lead Free | — | Yes (PBFREE suffix) |
| Packaging | — | Tube |
| Product Status | — | Active |