MPVZ5010G7U vs MPVZ5010G6U Comparación
Comparación detallada lado a lado de MPVZ5010G7U por NXP Semiconductors y MPVZ5010G6U por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPVZ5010G7U - 10 kPa Vented Gauge Pressure Sensor, 8-DIP | NXP
MPVZ5010G7U ✓ Activo
Comparación de especificaciones
| Parámetro | MPVZ5010G7U | MPVZ5010G6U |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $7,25 | $8,40 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (1.45 PSI) |
| Supply Voltage (Vcc) | 4.75 V to 5.25 V (5 V typical) | — |
| Corriente de alimentación | 10 mA (maximum) | 5 mA (typical) |
| Analog Output Range | 0.2 V to 4.7 V | — |
| Accuracy | ±1.5 %FS (0 °C to 85 °C) | ±5% over 0 C to 85 C |
| Tipo de salida | Analog, ratiometric to Vcc | Analog Voltage, Ratiometric |
| Response Time | [DATA_NEEDED: response time ms] | — |
| Rango de temperatura de funcionamiento | 0 °C to +85 °C | — |
| Compensated Temperature Range | -10 °C to +60 °C | — |
| Storage Temperature Range | -30 °C to +100 °C [DATA_NEEDED: confirm exact storage spec] | — |
| Encapsulado | 8-DIP Module (Case 1368-01, through-hole) | 8-SMD Module (SOP 8) |
| Tipo de montaje | Through-Hole (DIP module with vent tube) | Surface Mount |
| Sensor Technology | Piezoresistive silicon micromachined | — |
| Signal Conditioning | On-chip, temperature compensated, calibrated | On-chip, calibrated and temperature compensated |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Body Height | 5.46 mm | — |
| Rango de tensión de salida | — | 0.2 V to 4.7 V |
| Tensión de alimentación | — | 4.75 V to 5.25 V |
| Linearity | — | ±2.5% max |
| Temperatura de funcionamiento | — | -40 C to +125 C |
| Port Style | — | No Port (rear vented) |
| Technology | — | Piezoresistive (Monolithic Silicon) |
| Output Span | — | 4.5 V nominal (0.2 V to 4.7 V) |
| Lead-Free | — | Yes |