MPVZ7025GC6U vs MPVZ7025G6U Comparación
Comparación detallada lado a lado de MPVZ7025GC6U por NXP Semiconductors y MPVZ7025G6U por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPVZ7025GC6U - 25kPa Pressure Sensor, 0.2-4.7V, 8-SMD | NXP
MPVZ7025GC6U ✓ ActivoNXP Semiconductors
MPVZ7025G6U - ±25kPa Compound Pressure Sensor, 5V, 8-SMD | NXP
MPVZ7025G6U ✓ ActivoComparación de especificaciones
| Parámetro | MPVZ7025GC6U | MPVZ7025G6U |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $6,95 | $7,25 |
| Pressure Type | Compound / Gage (Vacuum + Positive) | Compound (Differential) |
| Pressure Range | -25 kPa to +25 kPa (±3.63 PSI) | — |
| Tipo de salida | Analog Voltage (ratiometric) | Analog Voltage |
| Rango de tensión de salida | 0.2 V to 4.7 V | 0.2 V to 4.7 V (at 5 V supply) |
| Tensión de alimentación | 4.75 V to 5.25 V (5 V typical) | 4.75 V to 5.25 V |
| Sensitivity (nominal) | [DATA_NEEDED: mV/kPa exact figure from datasheet curve] | — |
| Accuracy | ±2.5% (typical) | ±5% (over compensated range) |
| Temperatura de funcionamiento | -40°C to +125°C | -40 °C to +125 °C |
| Storage Temperature | [DATA_NEEDED: storage temp range] | — |
| Port Style | Vertical compound male 0.13" (3.17 mm) tube | No Port (Gel-filled sensing cavity) |
| Port Material | Sifel / Silicone gel (chemical-resistant) | — |
| Encapsulado | 8-SMD Module (CASE 98ASB17760C, SM Outline) | — |
| Tipo de montaje | Surface Mount (SMT), Tube Pack | Surface Mount |
| Response Time | 1 ms (typical) | — |
| AEC-Q100 | Automotive grade (per Freescale/NXP marketing) | — |
| Estado RoHS | Compliant | Compliant |
| Operating Pressure Range | — | -25 kPa to +25 kPa (-3.63 PSI to +3.63 PSI) |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Corriente de alimentación | — | [DATA_NEEDED: supply current] |
| Compensated Temperature | — | 0 °C to +85 °C |
| Encapsulado / Carcasa | — | 8-SMD Module, No Lead |
| Output Interface | — | Analog Voltage (ratiometric) |
| Technology | — | Piezoresistive MEMS, Monolithic Silicon |