MPX2050D vs MPX2050GP Comparación

Comparación detallada lado a lado de MPX2050D por STMicroelectronics y MPX2050GP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MPX2050GP MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro

MPX2050GP - 50 kPa Vented Gauge Pressure Sensor | NXP / STMicro

MPX2050GP ✓ Activo

Comparación de especificaciones

Parámetro MPX2050D MPX2050GP
Marca STMicroelectronics NXP Semiconductors
Categoría Pressure Sensors Pressure Sensors
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $5,40 $9,85
Pressure Type Differential Vented Gauge
Operating Pressure Range 0 kPa to 50 kPa (0 PSI to 7.25 PSI) 0 kPa to 50 kPa (0 PSI to 7.25 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] [DATA_NEEDED: maximum overload pressure]
Tipo de salida Analog voltage (Wheatstone bridge, differential) Analog Wheatstone Bridge (mV)
Output Voltage Span 0 mV to 40 mV (at 10 V excitation, 50 kPa) —
Sensitivity (typical) 0.45 mV/kPa (at 10 V excitation) —
Excitation Voltage 10 V DC (typical), [DATA_NEEDED: max Vex] —
Linearity ±0.5% (typical, full scale) +/-0.05% to +/-0.1% of FSS (typ)
Accuracy ±0.05% to ±0.2% (0°C to 85°C, Vex = 10 V) —
Temperatura de funcionamiento -40°C to +125°C 0C to +85C
Storage Temperature [DATA_NEEDED: storage temperature range] [DATA_NEEDED: storage temperature range]
Response Time 5 kHz (resonance-limited, [DATA_NEEDED: rise time in ms]) [DATA_NEEDED: response time / bandwidth]
Bridge Resistance 1.0 kΩ to 4.5 kΩ (input/output, typical [DATA_NEEDED: exact value]) —
Encapsulado 4-SIP Module (Unibody, ported) —
Port Configuration Dual inlet (differential) —
Tipo de montaje Through-hole SIP Through-Hole (SIP, vertical)
Estado RoHS Compliant (per ST product page) —
Nivel MSL [DATA_NEEDED: MSL rating] —
Full-Scale Output (Typ @ 10 V) — 40 mV (4 mV/V)
Zero Offset (Typ) — 0 mV
Supply / Excitation Voltage — 10 V typical (max 16 V per datasheet)
Pressure Hysteresis — < 0.1% of FSS
Port Style — Male 0.19" (4.93 mm) Tube
Encapsulado / Carcasa — 4-SIP Module (Case 344B-01)
Technology — Silicon Piezoresistive, MEMS
Diaphragm Material — Monolithic silicon with integrated strain gauge
Compensation — On-chip temperature compensated and laser-trimmed
Lead-Free / RoHS — Yes (RoHS compliant)

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