MPX2200DP vs MPX2200AP Comparación
Comparación detallada lado a lado de MPX2200DP por NXP Semiconductors y MPX2200AP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPX2200DP - 200 kPa Differential Pressure Sensor, 4-SIP Module
MPX2200DP ✓ ActivoComparación de especificaciones
| Parámetro | MPX2200DP | MPX2200AP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10,52 | $8,40 |
| Manufacturer | NXP Semiconductors (formerly Motorola) | — |
| Series | MPX2200 | — |
| Tipo de sensor | Differential Pressure Sensor (Piezoresistive) | — |
| Operating Pressure Range | 0 kPa to 200 kPa (0 PSI to 29.01 PSI) | 0 kPa to 200 kPa (0 to 29.01 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload pressure] | — |
| Tipo de salida | Analog Wheatstone Bridge (ratiometric) | Analog voltage (Wheatstone bridge) |
| Output Span | 0 mV to 40 mV at 10 V excitation | — |
| Sensitivity (nominal) | 0.2 mV/kPa | — |
| Pressure Port | Dual Male Tube, 0.19 in (4.93 mm) | Axial male tube 0.19 inch (4.93 mm) |
| Port Configuration | DP - Dual Port (differential) | — |
| Supply Voltage (recommended) | 10 V DC | — |
| Supply Voltage (max input) | 16 V DC | — |
| Temperatura de funcionamiento | -40C to +125C | -40C to +125C |
| Encapsulado / Carcasa | 4-SIP Module (Through-Hole) | — |
| Tipo de montaje | Through Hole | Through-Hole |
| Estado RoHS | Compliant | Check distributor listing - legacy part |
| Minimum Order Quantity | 100 (tray pack) | — |
| Min. Package Quantity | 20 (tray) | — |
| Pressure Type | — | Absolute |
| Rango de tensión de salida | — | 0 mV to 40 mV (at 10 V excitation) |
| Sensitivity | — | 0.2 mV/V typical |
| Excitation Voltage | — | 10 V (max 16 V) |
| Encapsulado | — | 4-SIP Module (through-hole) |
| Compensated Temperature | — | 0C to 85C |
| Technology | — | Silicon piezoresistive (on-chip temperature compensated) |
| Sensor Grade | — | A grade (high accuracy) |
| Non-Linearity | — | [DATA_NEEDED: Non-Linearity] |