MPXAZ6115AC6U vs MPXA6115AC6U Comparación
Comparación detallada lado a lado de MPXAZ6115AC6U por NXP Semiconductors y MPXA6115AC6U por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MPXAZ6115AC6U | MPXA6115AC6U |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,40 | $9,95 |
| Pressure Type | Absolute | Absolute |
| Operating Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) |
| Tipo de salida | Analog Voltage | Analog, ratiometric |
| Rango de tensión de salida | 0.2 V to 4.7 V | 0.2 V to 4.7 V (at 5 V supply) |
| Tensión de alimentación | 5.0 V typical (4.75 V to 5.25 V) | 4.75 V to 5.25 V |
| Corriente de alimentación | [DATA_NEEDED: supply current typical mA] | [DATA_NEEDED: supply current typical] |
| Accuracy | +/-1.5% Vfss (max) | ±1.5% (0°C to +85°C) |
| Temperatura de funcionamiento | -40C to +125C | -40°C to +125°C |
| Port Style | Top Port, Male 0.13" (3.17 mm) Tube | Single axial top port, 0.13" (3.17 mm) tube |
| Port Type | Single Axial Barbed | — |
| Encapsulado | 8-SMD, Gull Wing, Top Port | 8-SMD, Gull Wing (Case 1320-02, SOP-8) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Media Compatibility | Media Resistant (dry gases, isolated from harsh media) | — |
| Signal Conditioning | On-chip bipolar op-amp + thin-film resistor networks | On-chip bipolar op-amp, temperature compensated |
| Temperature Compensation | Built-in (calibrated across full range) | — |
| Estado RoHS | Compliant | Compliant |
| Maximum Over Pressure | — | [DATA_NEEDED: maximum over pressure rating] |
| Sensitivity | — | 45.9 mV/kPa (typical) |
| Response Time | — | 1.0 ms (typical) |
| Element Type | — | Piezoresistive MEMS silicon |