MPXM2010GS vs MPXV2010GP Comparación
Comparación detallada lado a lado de MPXM2010GS por NXP Semiconductors y MPXV2010GP por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPXM2010GS - 10kPa Vented Gauge Pressure Sensor | NXP/STMicro
MPXM2010GS ✓ ActivoSTMicroelectronics
MPXV2010GP - 10kPa Vented Gauge Pressure Sensor | STMicroelectronics
MPXV2010GP ✓ ActivoComparación de especificaciones
| Parámetro | MPXM2010GS | MPXV2010GP |
|---|---|---|
| Marca | NXP Semiconductors | STMicroelectronics |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,62 | $8,62 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa |
| Maximum Overload Pressure | [DATA_NEEDED: max overload pressure] | 75 kPa |
| Tipo de salida | Wheatstone Bridge (analog, differential mV) | Analog, ratiometric, mV output |
| Output Voltage Span | 0 mV to 25 mV at 10 V excitation | — |
| Sensitivity | 2.5 mV/kPa (nominal at 10 V) | 2.5 mV/kPa nominal at 10 V |
| Excitation Voltage | 10 V (max 16 V per NXP datasheet) | — |
| Corriente de alimentación | 6 mA (typical at 10 V excitation) | — |
| Temperatura de funcionamiento | -40 °C to +125 °C | -40 C to +125 C |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Linearity | [DATA_NEEDED: linearity %] | — |
| Temperature Compensation | On-chip (laser-trimmed thin-film) | — |
| Port Configuration | Top port, male 0.12" (2.97 mm) tube | Single vertical side port, 0.13" (3.17 mm) tube |
| Encapsulado | 5-SMD Module, top port | 8-SMD, Gull Wing, Side Port (Case 344B-01) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packing | Reel-Reel 13" Q2 NDP | — |
| Min Package Quantity | 400 | — |
| Min Order Quantity | 400 | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Supply Voltage (Vex) | — | 10 V typical (max 16 V) |
| Full-Scale Output (Span) at 10 V | — | 25 mV nominal at 10 kPa |
| Zero Pressure Output (Offset) | — | 0 mV to 1.0 mV |
| Pressure Hysteresis | — | 1.0 kPa (typical) |
| Response Time | — | 1.0 ms (typical) |
| Technology | — | Silicon piezoresistive MEMS, on-chip temp compensated |