MRF6S19140HR5 vs MRF6S19140HR3 Comparación
Comparación detallada lado a lado de MRF6S19140HR5 por NXP Semiconductors y MRF6S19140HR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF6S19140HR3 - 29W LDMOS RF MOSFET 1.93-1.99GHz | NXP Semiconductors
MRF6S19140HR3 ObsoleteComparación de especificaciones
| Parámetro | MRF6S19140HR5 | MRF6S19140HR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | RF MOSFETs |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $82,40 | $25,20 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Tipo de transistor | N-Channel RF Power LDMOS | LDMOS N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (Vdss) | 68 V (max) | — |
| Operating Drain Voltage (typical) | 28 V | — |
| Pulsed Drain Current (Id) | 1.15 A | — |
| Output Power (Pout) | 29 W (CW or pulsed) | — |
| Operating Frequency | 1.93 GHz to 1.99 GHz | — |
| Small-Signal Gain | 16 dB (typical) | — |
| Encapsulado / Carcasa | NI-880H-2L ceramic flange | NI-880H-2L (CASE 465B-03, STYLE 1), ceramic with flange |
| Tipo de montaje | Chassis / flange mount (bolt-down) | Chassis / Stud-Mount (ceramic flange, bolt-down thermal) |
| Process Technology | HV6 LDMOS | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Lead-Free | [DATA_NEEDED: lead-free status] | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temp range] | — |
| Channel-to-Flange Thermal Resistance | 0.45 C/W (estimated, datasheet figure) | — |
| Frequency Range | — | 1.93 GHz to 1.99 GHz (1930-1990 MHz) |
| Drain-Source Voltage (Max Rated) | — | 68 V |
| Test Drain Voltage (Vdd) | — | 28 V |
| Test Drain Current | — | 1.15 A |
| Power Output (Pout, Avg) | — | 29 W |
| Power Gain | — | 16 dB (typ) |
| Eficiencia | — | [DATA_NEEDED: drain efficiency %] |
| Recuento de pines | — | 3 |
| Application Class | — | Class AB, PCN/PCS base-station, TDMA/CDMA, multi-carrier |
| Operating Mode | — | CW / pulsed RF amplifier |
| Original Manufacturer | — | Freescale Semiconductor (now NXP) |
| Lead / Termination Finish | — | Gold-plated (per datasheet case drawing) |
| MSL | — | [DATA_NEEDED: MSL rating] |
| HSL/R3 Suffix | — | R3 = 13" tape and reel |
| Datasheet Document | — | MRF6S19140H.pdf (NXP/Freescale) |
| Datasheet Length | — | 12 pages (per third-party datasheet index) |